Samsung announced that is is going to be producing DDR (Double Data Rate) 2.0 NAND flash memory chips based on its smallest 20 nanometer architecture. The chips boast a doubling in memory storage upto 64GB and a performance increase of upto three times, over their current DDR 1.0 technology.
These chips will be used extensivly in mobile devices like Smartphones, Tablets and SSDs. Equipped with a toggleable DDR 2.0 interface the new 64 GB chips can transmit data at speeds of upto 400 Mbit/sec. DDR 2.0 provides a ten times increase in performance from the current 40 Mbit/sec DDR 1.0 interface. It also triples the performance over current toggleable DDR 1.0 chips which have a throughput of 133 Mbit/sec.
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